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| (R) ESDA25DB3 TRANSILTM ARRAY FOR ESD PROTECTION Application Specific Discretes A.S.D.TM APPLICATIONS Where transient overvoltage protection in esd sensitive equipment is required, such as : - COMPUTERS - PRINTERS - COMMUNICATION SYSTEMS It is particulary recommended for RS232 I/O port protectionwhere the line interfacewithstands 2 kV, ESD surges. FEATURES 18 BIDIRECTIONAL TRANSILTM FUNCTIONS LOW CAPACITANCE : C = 30pF @ VRM 500 W peak pulse power (8/20 s) DESCRIPTION The ESDA25DB3 is a dual monolithic voltage suppressor designed to protect componentswhich are connected to data and transmission lines against ESD. SO20 FUNCTIONAL DIAGRAM I/O 1 I/O 2 I/O 3 BENEFITS High ESD protection level : up to 25 kV High integration Suitable for high density boards COMPLIESWITHTHE FOLLOWINGSTANDARDS : IEC 1000-4-2 : level 4 MIL STD 883C-Method 3015-6 : class 3 (human body model) 1 2 3 4 5 6 7 8 9 20 I/O 18 19 I/O 17 18 I/O 16 17 I/O 15 16 I/O 14 15 I/O 13 14 I/O 12 13 11 I/O 11 GND 12 I/O 10 I/O 4 I/O 5 I/O 6 I/O 7 I/O 8 I/O 9 GND 10 January 1998 - Ed : 2 1/5 ESDA25DB3 ABSOLUTE MAXIMUM RATINGS (Tamb = 25C) Symbol VPP PPP Tstg Tj TL Parameter Electrostatic discharge MIL STD 883C - Method 3015-6 Peak pulse power (8/20s) Storage temperature range Maximum junction temperature Maximum lead temperature for soldering during 10s Value 25 500 - 55 to + 150 125 260 Unit kV W C C C ELECTRICAL CHARACTERISTICS (Tamb = 25C) Symbol VRM VBR VCL IRM IPP Parameter Stand-off voltage Breakdown voltage Clamping voltage Leakage current Peak pulse current Voltage temperature coefficient Capacitance Dynamic resistance T C Rd Types VBR min. note1 V @ max. IR IRM max. note1 A 2 @ VRM Rd typ. note 2 0.5 T max. note 3 10 /C 9.7 -4 C typ. 0V bias pF 50 V 30 mA 1 V 24 ESDA25DB3 25 note 1 : Betwenn any I/O pin Groung note 2 : Square pulse, Ipp = 25A, tp=2.5s. note 3 : VBR = T* (Tamb -25C) * VBR (25C) 2/5 (R) ESDA25DB3 CALCULATION OF THE CLAMPING VOLTAGE USE OF THE DYNAMIC RESISTANCE The ESDA family has been designed to clamp fast spikes like ESD. Generally the PCB designers need to calculate easily the clamping voltage VCL. This is why we give the dynamic resistance in addition to the classical parameters. The voltage across the protection cell can be calculated with the following formula: VCL = VBR + Rd IPP WhereIpp is the peakcurrent throughthe ESDAcell. DYNAMIC RESISTANCE MEASUREMENT The short duration of the ESD has led us to prefer a more adapted test wave, as below defined, to the classical 8/20s and 10/1000s surges. I Ipp As the value of the dynamic resistance remains stable for a surge duration lower than 20s, the 2.5s rectangular surge is well adapted. In addition both rise and fall times are optimized to avoid any parasitic phenomenon during the measurement of Rd. 2s tp = 2.5s t 2.5s duration measurement wave. 3/5 (R) ESDA25DB3 Fig. 1 : Peak power dissipation versus initial junction tempearature. Ppp[Tj initial]/Ppp[Tj initial=25C] 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 5000 Fig. 2 : Peak pulse power versus exponential pulse duration (Tj initial = 25 C). Ppp(W) 1000 Tj initial(C) 0 25 50 75 100 125 150 100 1 tp(s) 10 100 Fig. 3 : Clamping voltage versus peak pulse current (Tj initial = 25 C). Rectangular waveform tp = 2.5 s. Ipp(A) 50.0 tp=2.5s Fig. 4 : Capacitance versus reverse applied voltage (typical values). C(pF) 100 F=1MHz Vosc=30mV 10.0 50 1.0 20 VCL(V) 0.1 20 25 30 35 40 45 50 55 60 VR(V) 10 1 2 5 10 30 Fig. 5 : Relative variation of leakagecurrent versus junction temperature (typical values). IR[Tj] / IR[Tj=25C] 200 100 10 Tj(C) 1 25 50 75 100 125 4/5 (R) ESDA25DB3 ORDER CODE ESDA 25 D B 3 RL ESD ARRAY PACKAGING: RL = Tape and reel = Tube Package: SO20 VBR min Bidirectionel MARKING : Logo, Date Code, E25DB3 PACKAGE MECHANICAL DATA SO20 Plastic DIMENSIONS REF. D hx45 Millimetres Min. Typ. Max. Min. 2.65 0.10 0.33 0.23 12.6 7.40 1.27 10.0 0.50 0.50 1.27 0.020 8 (max) 10.65 0.394 0.20 0.004 0.51 0.013 0.32 0.009 13.0 0.484 7.60 0.291 Inches Typ. Max. 0.104 0.008 0.020 0.013 0.512 0.299 0.050 0.419 0.020 0.050 A A B e A1 K L A1 C B C D E H E e H h L K Packaging : Preferred packaging is tape and reel. Weight : 0.55g. Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change withoutnotice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics. (c) 1998 SGS-THOMSON Microelectronics - Printed in Italy - All rights reserved. SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Morocco The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. 5/5 (R) |
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